New Developments In High-Performance Resist Materials

This review looks at recent developments in optical resists, in particular resists for 365nm, 248nm and 193nm lithography. For the mature technology of the DNQ/novolak systems, emphasis is placed on the understanding of the physical/chemical mechanisms underlying the performance improvement seen in...

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Bibliographic Details
Published inJournal of Photopolymer Science and Technology Vol. 11; no. 4; pp. 687 - 703
Main Author Dammel, Ralph R.
Format Journal Article
LanguageEnglish
Published Hiratsuka The Society of Photopolymer Science and Technology(SPST) 1998
Japan Science and Technology Agency
Subjects
193nm resist
248nm resist
delay effects
DNQ/novolak resist
DUV
etch resistance
high/low activation energy protective groups
iso/dense line bias
main chain annelated systems
methacrylate systems
R(m) curve
selective dissolution
tandem novolak
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Summary:This review looks at recent developments in optical resists, in particular resists for 365nm, 248nm and 193nm lithography. For the mature technology of the DNQ/novolak systems, emphasis is placed on the understanding of the physical/chemical mechanisms underlying the performance improvement seen in the last generations of i-line resists. For 248nm resists, a technology which has been used by a number of early adopters and which now is poised to enter the mass market, the emphasis is on the specific problems that accompany the use of the two main types of chemical amplification resists as they have to prove themselves in the production environment. Finally, for the new field 193nm resists, recent development are reviewed and assessed to show that the goal of a dry-etch stable single layer, wet developed resist is feasible.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.11.687