Influence of High Indium Composition InGaN on Lattice Matched ZnO Sacrificial Substrates
MOCVD growth of InGaN on ZnO substrates has achieved indium concentration as high as 43% as observed by high-resolution X-ray diffraction (HRXRD). The uniqueness of this finding is the absence of phase separation and the higher indium incorporation compared to growth on thick GaN/sapphire. Transmiss...
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Published in | Journal of Light & Visual Environment Vol. 32; no. 2; pp. 143 - 147 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Tokyo
The Illuminating Engineering Institute of Japan
2008
Japan Science and Technology Agency |
Subjects | |
Online Access | Get full text |
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Summary: | MOCVD growth of InGaN on ZnO substrates has achieved indium concentration as high as 43% as observed by high-resolution X-ray diffraction (HRXRD). The uniqueness of this finding is the absence of phase separation and the higher indium incorporation compared to growth on thick GaN/sapphire. Transmission electron microscopy (TEM) shows perfectly matched GaN and ZnO lattices. In addition, atomic layer deposition (ALD) transition layers have been grown in order to provide a transition layer on ZnO substrates to block Zn diffusion and allow for future substrate removal for thin nitride fabrication. |
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ISSN: | 0387-8805 1349-8398 |
DOI: | 10.2150/jlve.32.143 |