Influence of High Indium Composition InGaN on Lattice Matched ZnO Sacrificial Substrates

MOCVD growth of InGaN on ZnO substrates has achieved indium concentration as high as 43% as observed by high-resolution X-ray diffraction (HRXRD). The uniqueness of this finding is the absence of phase separation and the higher indium incorporation compared to growth on thick GaN/sapphire. Transmiss...

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Bibliographic Details
Published inJournal of Light & Visual Environment Vol. 32; no. 2; pp. 143 - 147
Main Authors LI, Nola, WANG, Shen-Jie, PARK, Eun-Hyun, FENG, Zhe Chuan, TSAI, Hung-Lin, YANG, Jer-Ren, VALENCIA, Adriana, NAUSE, Jeff, SUMMERS, Christoper, FERGUSON, Ian
Format Journal Article
LanguageEnglish
Published Tokyo The Illuminating Engineering Institute of Japan 2008
Japan Science and Technology Agency
Subjects
ALD
InGaN
MOCVD
ZnO
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Summary:MOCVD growth of InGaN on ZnO substrates has achieved indium concentration as high as 43% as observed by high-resolution X-ray diffraction (HRXRD). The uniqueness of this finding is the absence of phase separation and the higher indium incorporation compared to growth on thick GaN/sapphire. Transmission electron microscopy (TEM) shows perfectly matched GaN and ZnO lattices. In addition, atomic layer deposition (ALD) transition layers have been grown in order to provide a transition layer on ZnO substrates to block Zn diffusion and allow for future substrate removal for thin nitride fabrication.
ISSN:0387-8805
1349-8398
DOI:10.2150/jlve.32.143