Characterization of CdTe/CdZnTe detectors

In order to characterize CdTe/CdZnTe detectors in a planar configuration, we have developed a new method to extract /spl mu//spl tau/ products. In this method, we prepare an analytic spectral model based on the charge transport properties in the device, which is intended to be used in fitting calcul...

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Published inIEEE transactions on nuclear science Vol. 49; no. 3; pp. 1258 - 1263
Main Authors Sato, G., Takahashi, T., Sugiho, M., Kouda, M., Mitani, T., Nakazawa, K., Okada, Y., Watanabe, S.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.06.2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Cadmium compounds
Cadmium tellurides
Cadmium zinc tellurides
Computational efficiency
Computing time
Conductivity
Current carriers
Detectors
Electromagnetic wave absorption
Gamma ray detectors
Mathematical models
Photonic band gap
Physics
Space technology
Spectra
Spectral analysis
Voltage
Zinc
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Summary:In order to characterize CdTe/CdZnTe detectors in a planar configuration, we have developed a new method to extract /spl mu//spl tau/ products. In this method, we prepare an analytic spectral model based on the charge transport properties in the device, which is intended to be used in fitting calculation. The low mobility-lifetime (/spl mu//spl tau/) products of carriers in CdTe/CdZnTe detectors produce a position dependency in the charge induction efficiency. The model takes the induction efficiency and interaction positions of photons into account. Since the model is parameterized by /spl mu//spl tau/ products, it can extract /spl mu//spl tau/ products. Here, we demonstrate how the model works based on the results from 2-mm-thick HPB CdZnTe and THM CdTe detectors.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2002.1039648