Spin injection, transport, and read/write operation in spin-based MOSFET
We proposed a novel spin-based MOSFET “Spin-Transfer-torque-Switching MOSFET ( STS-MOSFET)” that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co...
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| Published in | Thin solid films Vol. 519; no. 23; pp. 8266 - 8273 |
|---|---|
| Main Authors | , , , , , |
| Format | Journal Article Conference Proceeding |
| Language | English |
| Published |
Amsterdam
Elsevier B.V
30.09.2011
Elsevier |
| Subjects | |
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| Abstract | We proposed a novel spin-based MOSFET “Spin-Transfer-torque-Switching MOSFET (
STS-MOSFET)” that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using
STS. The
STS-MOSFETs with Heusler alloy (Co
2Fe
1Al
0.5Si
0.5) were prepared and reconfigurability of a novel spintronics-based MOSFET,
STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (
MC) and write characteristics with the endurance of over 10
5 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the
STS-MOSFETs. |
|---|---|
| AbstractList | We proposed a novel spin-based MOSFET "Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)" that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co2Fe1Al0.5Si0.5) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 105 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs. We proposed a novel spin-based MOSFET “Spin-Transfer-torque-Switching MOSFET ( STS-MOSFET)” that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co 2Fe 1Al 0.5Si 0.5) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent ( MC) and write characteristics with the endurance of over 10 5 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs. |
| Author | Tanamoto, Tetsufumi Marukame, Takao Inokuchi, Tomoaki Ishikawa, Mizue Saito, Yoshiaki Sugiyama, Hideyuki |
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| Keywords | Spin-MOSFET Spin-dependent transport Magnetocurrent ratio Heusler alloy Spin-transfer- torque-switching Read/write endurance MOSFET Semiconductor materials Ferromagnetic materials Contact resistance Spin injection Spin transistor Switching Magnetic tunnel junction Tunnelling magnetoresistance Heusler alloys Transport processes Silicon Spin transfer Cobalt alloys Spintronics Transition element alloys |
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| Snippet | We proposed a novel spin-based MOSFET “Spin-Transfer-torque-Switching MOSFET (
STS-MOSFET)” that offers non-volatile memory and transistor functions with... We proposed a novel spin-based MOSFET "Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)" that offers non-volatile memory and transistor functions with... |
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| SubjectTerms | Condensed matter: electronic structure, electrical, magnetic, and optical properties Contact resistance Devices Durability Electronic transport in condensed matter Endurance Exact sciences and technology Ferromagnetism Heusler alloy Magnetocurrent ratio MOSFETs Physics Read/write endurance Space flight Space shuttles Spin polarized transport Spin-dependent transport Spin-MOSFET Spin-transfer- torque-switching |
| Title | Spin injection, transport, and read/write operation in spin-based MOSFET |
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