Spin injection, transport, and read/write operation in spin-based MOSFET

• Published in: Thin solid films Vol. 519; no. 23; pp. 8266 - 8273
• Main Authors: Saito, Yoshiaki, Marukame, Takao, Inokuchi, Tomoaki, Ishikawa, Mizue, Sugiyama, Hideyuki, Tanamoto, Tetsufumi
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 30.09.2011; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Contact resistance; Devices; Durability; Electronic transport in condensed matter; Endurance; Exact sciences and technology; Ferromagnetism; Heusler alloy; Magnetocurrent ratio; MOSFETs; Physics; Read/write endurance; Space flight; Space shuttles; Spin polarized transport; Spin-dependent transport; Spin-MOSFET; Spin-transfer- torque-switching; Spin-MOSFET; Spin-dependent transport; Magnetocurrent ratio; Heusler alloy; Spin-transfer- torque-switching; Read/write endurance; MOSFET; Semiconductor materials; Ferromagnetic materials; Contact resistance; Spin injection; Spin transistor; Switching; Magnetic tunnel junction; Tunnelling magnetoresistance; Heusler alloys; Transport processes; Silicon; Spin transfer; Cobalt alloys; Spintronics; Transition element alloys
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2011.03.073

We proposed a novel spin-based MOSFET “Spin-Transfer-torque-Switching MOSFET ( STS-MOSFET)” that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co 2Fe 1Al 0.5Si 0.5) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent ( MC) and write characteristics with the endurance of over 10 5 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs.