Laser micropen integrated direct writing for fabrication of thick film gap-tuning capacitor

•Thick film gap-tuning capacitors are fabricated by a new method of laser micropen integrated direct writing.•Gold and polyimide are used as the materials of structural and sacrificial layers, respectively.•The maximum tuning range (MTR) of the gap-tuning capacitor is 30.35% with the practical pull-...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 114; pp. 7 - 11
Main Authors Cao, Yu, Zeng, Xiaoyan
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.02.2014
Elsevier
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Summary:•Thick film gap-tuning capacitors are fabricated by a new method of laser micropen integrated direct writing.•Gold and polyimide are used as the materials of structural and sacrificial layers, respectively.•The maximum tuning range (MTR) of the gap-tuning capacitor is 30.35% with the practical pull-in voltage of 39V.•The process enables a practical route to a desktop fabrication system for electronic circuitry of RF MEMS. With a fixed base-electrode and a movable upper-electrode structure, the electrostatic actuated parallel plate tuning capacitors have the advantages of no DC power consumption, high efficiency and easy to implement. We propose a novel approach of laser micropen integrated direct writing for fabrication of the thick film electrostatic-controlled gap-tuning capacitors. Adopting commercial gold paste (Au) as the material of structural electrodes and polyimide colloid as the material of sacrificial layer, the thick film gap-tuning capacitor arrays are successfully fabricated on the fused silica glass substrate. The electrical analysis shows that the maximum tuning range (MTR) of the thick film gap-tuning capacitor is 30.35% with the practical pull-in voltage of 39V, and the Q value is 50 under the frequency of 1GHz.
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ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2013.08.019