Laser micropen integrated direct writing for fabrication of thick film gap-tuning capacitor
•Thick film gap-tuning capacitors are fabricated by a new method of laser micropen integrated direct writing.•Gold and polyimide are used as the materials of structural and sacrificial layers, respectively.•The maximum tuning range (MTR) of the gap-tuning capacitor is 30.35% with the practical pull-...
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Published in | Microelectronic engineering Vol. 114; pp. 7 - 11 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.02.2014
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | •Thick film gap-tuning capacitors are fabricated by a new method of laser micropen integrated direct writing.•Gold and polyimide are used as the materials of structural and sacrificial layers, respectively.•The maximum tuning range (MTR) of the gap-tuning capacitor is 30.35% with the practical pull-in voltage of 39V.•The process enables a practical route to a desktop fabrication system for electronic circuitry of RF MEMS.
With a fixed base-electrode and a movable upper-electrode structure, the electrostatic actuated parallel plate tuning capacitors have the advantages of no DC power consumption, high efficiency and easy to implement. We propose a novel approach of laser micropen integrated direct writing for fabrication of the thick film electrostatic-controlled gap-tuning capacitors. Adopting commercial gold paste (Au) as the material of structural electrodes and polyimide colloid as the material of sacrificial layer, the thick film gap-tuning capacitor arrays are successfully fabricated on the fused silica glass substrate. The electrical analysis shows that the maximum tuning range (MTR) of the thick film gap-tuning capacitor is 30.35% with the practical pull-in voltage of 39V, and the Q value is 50 under the frequency of 1GHz. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 ObjectType-Article-1 ObjectType-Feature-2 |
ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/j.mee.2013.08.019 |