Two Kinds of Hydrogen Monomers Manifested in Plasma-Exposed Silicon

In boron-doped silicon annealed in a plasma ambient (at 150°C), the reported hydrogen concentration profile and the hole profile cannot be simultaneously fitted assuming only one kind of in-diffusing hydrogen ions H+ of a definite parameter D+K (where D+ is the diffusivity of H+ and K is the equilib...

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Bibliographic Details
Published inAdvances in materials science and engineering Vol. 2018; no. 2018; pp. 1 - 8
Main Author Voronkov, Vladimir V.
Format Journal Article
LanguageEnglish
Published Cairo, Egypt Hindawi Publishing Corporation 01.01.2018
Hindawi
Hindawi Limited
Wiley
Subjects
Boron
Defects
Dimers
Equilibrium
Hydrogen
Hydrogen ions
Hydrogen storage
Plasma
Silicon
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Summary:In boron-doped silicon annealed in a plasma ambient (at 150°C), the reported hydrogen concentration profile and the hole profile cannot be simultaneously fitted assuming only one kind of in-diffusing hydrogen ions H+ of a definite parameter D+K (where D+ is the diffusivity of H+ and K is the equilibrium dissociation constant of the HB defect, the passivated boron). A good fit is possible only assuming two independent kinds of H+—one of a larger value of D+K and the other—of a smaller value. A concept of two independent atomic subsystems H(1) and H(2), each involving both positive and neutral charge states, is also useful to account for hydrogen pairing into dimers.
ISSN:1687-8434
1687-8442
DOI:10.1155/2018/2385438