Electrical and magnetic properties of tantalum silicon telluride and isostructural compounds

Electrical resistivity, magnetic susceptibility, and lattice parameter measurements for the family of low-dimensional compounds, M 4ZTe 4 (M=Ta, Z=Si, Cr, Fe, Co, and Ni; M=Nb, Z=Si, Fe) are reported. The compounds with Z=Si are diamagnetic and the resistivity curves suggest two phase transitions, p...

Full description

Saved in:
Bibliographic Details
Published inMaterials research bulletin Vol. 29; no. 3; pp. 327 - 336
Main Authors Badding, M.E., Gitzendanner, R.L., Ziebarth, R.P., DiSalvo, F.J.
Format Journal Article
LanguageEnglish
Published London Elsevier Ltd 01.03.1994
Amsterdam Elsevier Science
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Electrical resistivity, magnetic susceptibility, and lattice parameter measurements for the family of low-dimensional compounds, M 4ZTe 4 (M=Ta, Z=Si, Cr, Fe, Co, and Ni; M=Nb, Z=Si, Fe) are reported. The compounds with Z=Si are diamagnetic and the resistivity curves suggest two phase transitions, possibly due to charge density waves in these pseudo one-dimensional systems. For Z=Cr, Fe, Co, and Ni the compounds are paramagnetic metals with characteristics of typical intermetallic phases.
Bibliography:FG02-87ER45298
ISSN:0025-5408
1873-4227
DOI:10.1016/0025-5408(94)90030-2