Atmospheric Pressure Plasma ALD of Titanium Oxide

Atmospheric‐pressure plasma atomic layer deposition (APP‐ALD) of TiOx at room temperature is reported for the first time. Layer properties of the APP‐ALD‐grown TiOx are compared to those reported for the low‐pressure plasma ALD of TiOx. The contribution of parasitic CVD to the process is discussed....

Full description

Saved in:
Bibliographic Details
Published inChemical vapor deposition Vol. 19; no. 4-6; pp. 167 - 173
Main Authors Theirich, Detlef, Müller, Roman, Zilberberg, Kirill, Trost, Sara, Behrendt, Andreas, Riedl, Thomas
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 01.06.2013
WILEY‐VCH Verlag
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Atmospheric‐pressure plasma atomic layer deposition (APP‐ALD) of TiOx at room temperature is reported for the first time. Layer properties of the APP‐ALD‐grown TiOx are compared to those reported for the low‐pressure plasma ALD of TiOx. The contribution of parasitic CVD to the process is discussed. The application of the resulting TiOx layers as electron‐extraction interlayers in inverted organic solar cells (OSCs) is demonstrated. The characteristics of OSCs based on APP‐ALD‐grown TiOx are similar to those of OSCs based on TiOx prepared by low‐pressure thermal ALD or sol‐gel processing. APP‐ALD is intended to harvest the beneficial properties of ALD layers in a high‐throughput atmospheric processing environment. Atmospheric‐pressure plasma atomic layer deposition (APP‐ALD) of TiOx at room temperature is reported for the first time. The application of the resulting TiOx layers as electron‐extraction interlayers in inverted organic solar cells (OSCs) is demonstrated. The characteristics of OSCs based on APP‐ALD‐grown TiOx are similar to those of OSCs based on TiOx prepared by low‐pressure thermal ALD or sol‐gel processing.
Bibliography:Financial support by the German Federal Ministry for Education and Research (Grant No. FKZ 13N11777) and the Deutsche Forschungsgemeinschaft (DFG) (Grant No. RI1551/4-1) is gratefully acknowledged.
Deutsche Forschungsgemeinschaft (DFG) - No. RI1551/4-1
istex:C8E6B5665DC562E3F7FA08FE83BD4EAACDBBE663
ark:/67375/WNG-NGBFFJS6-C
German Federal Ministry for Education and Research - No. FKZ 13N11777
ArticleID:CVDE201207039
Financial support by the German Federal Ministry for Education and Research (Grant No. FKZ 13N11777) and the Deutsche Forschungsgemeinschaft (DFG) (Grant No. RI1551/4‐1) is gratefully acknowledged.
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0948-1907
1521-3862
DOI:10.1002/cvde.201207039