Catalytic nanopores for electroless deposition of adhesive metal films on silicon: Applications to various silicon substrates including multi- and micro-crystalline

Metal‐particle‐assisted hydrofluoric acid etching of silicon (Si) is a unique method of preparing Si nanopores with metal nanoparticles at the bottom of each nanopore. Autocatalytic electroless deposition, which is the conventional method to metalize nonmetallic substrates, requires catalyzation of...

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Published inPhysica status solidi. C Vol. 8; no. 6; pp. 1769 - 1773
Main Authors Yae, Shinji, Sakabe, Keisuke, Hirano, Tatsuya, Fukumuro, Naoki, Matsuda, Hitoshi
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.06.2011
WILEY‐VCH Verlag
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Summary:Metal‐particle‐assisted hydrofluoric acid etching of silicon (Si) is a unique method of preparing Si nanopores with metal nanoparticles at the bottom of each nanopore. Autocatalytic electroless deposition, which is the conventional method to metalize nonmetallic substrates, requires catalyzation of the substrates before deposition. For Si substrates, obtaining adhesive metal films with conventional catalyzation pretreatments is difficult. We recently developed a new method to produce adhesive metal films on Si substrates using catalytic nanopores that consists of three steps: 1) displacement deposition of metal nanoparticles; 2) Si nanopore formation by metal‐particle‐assisted hydrofluoric acid etching; and 3) autocatalytic electroless deposition of metal films. In this study, the new method is applied not only to previously reported p‐Si (100) 1 Ω cm substrates but also to various Si substrates, such as low and high resistibility, p‐ and n‐types, (100), (111), and (110) planes, and single‐, multi‐ and micro‐crystalline substrates. Adhesive and bright metal films were formed on all Si substrates. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:CREST
ark:/67375/WNG-TK41MDRR-5
istex:2E9686AB2B7E6FF8DFA2FDA7F54B95AAB9800964
ArticleID:PSSC201000207
Research for Promoting Technological Seeds from JST
Grant-in-Aid for Scientific Research (C) from JSPS - No. 20560676
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1862-6351
1610-1642
1610-1642
DOI:10.1002/pssc.201000207