Stress analysis of a-plane GaN grown on r-plane sapphire substrates

Non‐polarized and polarized Raman spectra were measured in a‐plane GaN films grown on r‐plane sapphire. Active phonon models were verified under different geometry configurations. Our results showes that all a‐plane GaN films are under compressive strains both along and perpendicular the c‐axis. Wit...

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Bibliographic Details
Published inPhysica status solidi. C Vol. 8; no. 7-8; pp. 2066 - 2068
Main Authors Ma, Bei, Hideto, Miyake, Hiramatsu, Kazumasa, Harima, Hiroshi
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.07.2011
WILEY‐VCH Verlag
Subjects
a-plane GaN
Compressive properties
Crystals
Film thickness
Gallium nitrides
MOVPE
non-polar
Raman scattering
Sapphire
Solid state physics
Strain
stress
Tilt
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Summary:Non‐polarized and polarized Raman spectra were measured in a‐plane GaN films grown on r‐plane sapphire. Active phonon models were verified under different geometry configurations. Our results showes that all a‐plane GaN films are under compressive strains both along and perpendicular the c‐axis. With increasing film thickness, compressive strains are gradually relaxed. Strain relaxation process relieves the tilt and twist of crystal grains to improve crystal quality. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:ark:/67375/WNG-LMH4MT73-C
Akasaki Research Center of Nagoya University, Grants-in-Aid for Scientific Research - No. 21360007; No. 21560014
istex:C1BB8308F7F9C207811E19E379ACAC6FD1EE64C0
Scientific Research on Priority Areas - No. 18069006
MEXT, and JSPS Fellows - No. 22-8374
ArticleID:PSSC201001166
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1862-6351
1610-1642
1610-1642
DOI:10.1002/pssc.201001166