Improving Spin-Transport by Disorder

A new scheme dedicated to improving spin‐transport characteristics by applying random disorder as a constructive agent is reported. The approach paves the way for the construction of novel systems with a surprising combination of properties, which are either extremely rare or even entirely absent wi...

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Bibliographic Details
Published inAdvanced functional materials Vol. 23; no. 7; pp. 832 - 838
Main Authors Chadov, Stanislav, Kiss, Janos, Felser, Claudia
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 18.02.2013
WILEY‐VCH Verlag
Subjects
conductivity
Construction
Construction materials
Disorders
electron localization
Magnetic semiconductors
Magnetization
magnetoresistance
Manganese
spin-transport
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Summary:A new scheme dedicated to improving spin‐transport characteristics by applying random disorder as a constructive agent is reported. The approach paves the way for the construction of novel systems with a surprising combination of properties, which are either extremely rare or even entirely absent within the known classes of ordered materials: half‐metals with no net magnetization and magnetic semiconductors. As a real case example for the applicability of the scheme, it is shown that a series of such materials can be derived from the tetragonal Heusler compound Mn3Ga by substituting Mn with a 3d‐transition metal. A new scheme dedicated to improving spin‐transport characteristics by applying random disorder as a constructive agent is reported. This leads to novel systems with a surprising combination of properties: half‐metals with no net magnetization and magnetic semiconductors.
Bibliography:istex:E739A0D4736CE747AEE9F6DE7C6F32D749139DC9
ark:/67375/WNG-6KVLBS8Q-0
ArticleID:ADFM201201693
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201201693