Oxidation behaviors of carbon fiber reinforced multilayer SiC-Si3N4 matrix composites

• Published in: Journal of advanced ceramics Vol. 11; no. 2; pp. 354 - 364
• Main Authors: Dang, Xiaolin, Zhao, Donglin, Guo, Tong, Fan, Xiaomeng, Xue, Jimei, Ye, Fang, Liu, Yongsheng, Cheng, Laifei
• Format: Journal Article
• Language: English
• Published: Beijing Tsinghua University Press 01.02.2022; Springer Nature B.V
• Subjects: carbon fiber reinforced SiC matrix composites (C/SiC); Carbon fiber reinforcement; Carbon fibers; Ceramics; Characterization and Evaluation of Materials; Chemical vapor infiltration; Chemistry and Materials Science; coefficient of thermal expansion (CTE) mismatch; Composites; Diffusion layers; elastic modulus mismatch; Fiber composites; Glass; Materials Science; Microcracks; Modulus of elasticity; multilayer SiC-Si3N4 matrices; Multilayers; Nanotechnology; Natural Materials; Oxidation; Oxidation resistance; Research Article; Silicon nitride; Stress distribution; Structural Materials; Thermal expansion; Transition layers; coefficient of thermal expansion (CTE) mismatch; carbon fiber reinforced SiC matrix composites (C/SiC); elastic modulus mismatch; matrices; oxidation resistance; N; multilayer SiC-Si
• ISSN: 2226-4108; 2227-8508
• DOI: 10.1007/s40145-021-0539-1

Oxidation behaviors of carbon fiber reinforced SiC matrix composites (C/SiC) are one of the most noteworthy properties. For C/SiC, the oxidation behavior was controlled by matrix microcracks caused by the mismatch of coefficients of thermal expansion (CTEs) and elastic modulus between carbon fiber and SiC matrix. In order to improve the oxidation resistance, multilayer SiC-Si 3 N 4 matrices were fabricated by chemical vapor infiltration (CVI) to alleviate the above two kinds of mismatch and change the local stress distribution. For the oxidation of C/SiC with multilayer matrices, matrix microcracks would be deflected at the transition layer between different layers of multilayer SiC-Si 3 N 4 matrix to lengthen the oxygen diffusion channels, thereby improving the oxidation resistance of C/SiC, especially at 800 and 1000 °C. The strength retention ratio was increased from 61.9% (C/SiC-SiC/SiC) to 75.7% (C/SiC-Si 3 N 4 /SiC/SiC) and 67.8% (C/SiC-SiC/Si 3 N 4 /SiC) after oxidation at 800 °C for 10 h.