Effects of UV-ozone treatment on radio-frequency magnetron sputtered ZnO thin films
The effects of UV-ozone treatment on ZnO thin films prepared by using radio-frequency magnetron sputtering are investigated. Decrease in the density of oxygen vacancy as well as increase in the density of oxygen interstitial were inferred from the UV-ozone treated samples. It was also found that a c...
Saved in:
Published in | Thin solid films Vol. 520; no. 1; pp. 569 - 573 |
---|---|
Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
31.10.2011
Elsevier |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The effects of UV-ozone treatment on ZnO thin films prepared by using
radio-frequency magnetron sputtering are investigated. Decrease in the density of oxygen vacancy as well as increase in the density of oxygen interstitial were inferred from the UV-ozone treated samples. It was also found that a considerable difference in the work function (0.25
eV) is induced by UV-ozone treatment implying a shift in Fermi level. This shift was confirmed by
capacitance–voltage measurements, which demonstrated that the boundary between the inversion region and the depletion region of a ZnO-based
metal-oxide-semiconductor (MOS) capacitor positively shifts when UV ozone treated. Our results clearly indicate that the threshold voltage of a thin film transistor can be adjusted by modifying the ZnO surface via UV ozone treatment. MOS capacitors fabricated with UV-ozone treated HfO
2 and/or ZnO also yielded a smaller leakage current (~
73%–90% smaller) and a larger breakdown voltage (~
8%–11% larger). The physical mechanism behind the effect of the UV ozone treatment is addressed in this study with the help of
X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. |
---|---|
Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2011.07.004 |