A dual sticking coefficient chemical vapor deposition model

A quantitatively exact simulation of the step coverage of thin solid films prepared by low pressure chemical vapor deposition (LPCVD) is helpful to the computer aided development of the fabrication process of microelectronic devices. In addition, conclusions regarding the molecular microscopic react...

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Bibliographic Details
Published inESSDERC '92: 22nd European Solid State Device Research conference Vol. 19; no. 1; pp. 503 - 506
Main Authors Wille, Holger, Burte, Edmund P.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Elsevier B.V 1992
IEEE
Subjects
Chemical vapor deposition
Computational modeling
Computer simulation
Differential equations
Fabrication
Microelectronics
Solid modeling
Substrates
Surface topography
Temperature
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Summary:A quantitatively exact simulation of the step coverage of thin solid films prepared by low pressure chemical vapor deposition (LPCVD) is helpful to the computer aided development of the fabrication process of microelectronic devices. In addition, conclusions regarding the molecular microscopic reactions can be drawn due to our most simple physico-chemical model with only three well comprehensible parameters.
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ISBN:9780444894786
0444894780
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(92)90484-9