Synthesis and optelectronic characterization of gallium doped zinc oxide transparent electrodes

• Published in: Thin solid films Vol. 288; no. 1; pp. 29 - 31
• Main Authors: Hirata, G.A., McKittrick, J., Cheeks, T., Siqueiros, J.M., Diaz, J.A., Contreras, O., Lopez, O.A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.11.1996
• Subjects: Electrical properties and measurements; Laser ablation; Optical properties; Zinc oxide; Zinc oxide; Laser ablation; Electrical properties and measurements; Optical properties
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(96)08862-1

In this work we report on pulsed laser deposition of gallium-doped zinc oxide (ZnO:Ga) transparent-conducting thin films grown on glass at different substrate temperatures. A widening in the optical bandgap and a good gallium-doping efficiency were observed in the films when the substrate temperature was raised from 150 °C to 300 °C, as determined from optical and electrical measurements. X-ray diffraction measurements revealed that the films grow preferentially oriented in the [002] crystallographic direction of the ZnO grains. The crystallinity of the films was also found to be strongly dependent on the substrate deposition temperature. The ZnO:Ga transparent films had excellent transmittance (85%) in the visible spectrum and a low electrical resistivity value (7 × 10 −4 Ω cm) in 200 nm thickness samples deposited on glass by laser ablation at 300 °C.