Growth and properties of transparent p-NiO/n-ITO (In2O3:Sn) p–n junction thin film diode

• Published in: Thin solid films Vol. 519; no. 11; pp. 3840 - 3843
• Main Authors: Mistry, B.V., Bhatt, P., Bhavsar, K.H., Trivedi, S.J., Trivedi, U.N., Joshi, U.S.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 31.03.2011; Elsevier
• Subjects: Bias; Chemical solution deposition; Cross-disciplinary physics: materials science; rheology; Current–voltage characteristics; Diodes; Exact sciences and technology; Growth from solutions; Indium tin oxide; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Nanocrystals; Nanoscale materials and structures: fabrication and characterization; Other topics in nanoscale materials and structures; Oxides; P-n junctions; Physics; p–n junction; Theory and models of film growth; Thin films; Transparent conducting oxide; Volt-ampere characteristics; Chemical solution deposition; p–n junction; Current–voltage characteristics; Transparent conducting oxide; Atomic force microscopy; Liquid phase deposition; Photonic band gap; XRD; Nanostructures; Leakage currents; Thin films; Current-voltage characteristics; p n junctions; Tin oxide; Optical properties; Breakdown; Crystal growth from solutions; Diffusion; IV characteristic; p-n junction; Rectification; Electrical properties; Grazing incidence; Diodes; Indium oxide; Interfaces; Tin additions; Thin film devices; Growth mechanism; Heteroepitaxy; Transparent material; Nanostructured materials; Electron beam evaporation; Nickel oxide
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2011.01.255

We have grown “all oxide” transparent p–n junction thin film nanostructure device by using chemical solution deposition and E-beam evaporation onto SiO2 substrate. Combined grazing incidence X-ray diffraction and atomic force microscopy confirm phase pure, mono-disperse 30nm NiO and 2at. wt.% Sn doped In2O3 (ITO) nanocrystallites. Better than 70% optical transparency, at a wavelength of 600nm, is achieved across 160nm thick p–n junction. The optical band gap across the junction was found to decrease as compared to the intrinsic ITO and NiO. The current–voltage (I–V) characteristics show rectifying nature with dynamic transfer resistance ratio of the order of 103 in the forward bias condition. Very small reverse leakage current with appreciable breakdown was observed under the reverse bias condition. The observed optical and electrical properties of oxide transparent diode are attributed to the heteroepitaxial nature and carrier diffusion at the junction interface.