Simulation algorithm of carrier transport subject to Lorentz force in semiconductor films

• Published in: Solid-state electronics Vol. 63; no. 1; pp. 137 - 139
• Main Authors: Kimura, Mutsumi, Hirako, Masaaki, Yamaoka, Toshifumi, Tani, Satoshi
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.09.2011; Elsevier
• Subjects: Algorithms; Applied sciences; Carrier transport; Computer simulation; Electronics; Exact sciences and technology; Finite difference method; Grain boundaries; Grain boundary; Hall effect; Lorentz force; Materials; Polycrystalline semiconductor; Semiconductor film; Semiconductors; Simulation algorithm; Voltage; Polycrystalline semiconductor; Semiconductor film; Simulation algorithm; Hall effect; Lorentz force; Carrier transport; Grain boundary; Semiconductor thin films; Polycrystal; Algorithm; Drift current; Transport process; Diffusion current; Finite difference method
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2011.05.022

Hall effect around a grain boundary in a polycrystalline semiconductor film. [Display omitted] ► We have developed a simulation algorithm of carrier transport subject to Lorentz force in semiconductor films. ► The Lorentz current is discretized with the drift and diffusion currents. ► The simulation algorithm is implemented in finite difference methods. ► Hall effect around a grain boundary in a polycrystalline semiconductor film is evaluated as a simulation example. ► It is found that a high Hall voltage is generated at the grain boundary. We have developed a simulation algorithm of carrier transport subject to Lorentz force in semiconductor films. The Lorentz current is discretized with the drift and diffusion currents, and the simulation algorithm is implemented in finite difference methods. Hall effect around a grain boundary in a polycrystalline semiconductor film is evaluated as a simulation example, and it is found that a high Hall voltage is generated at the grain boundary.