Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

• Published in: Microelectronic engineering Vol. 88; no. 4; pp. 342 - 346
• Main Authors: Vincent, B., Shimura, Y., Takeuchi, S., Nishimura, T., Eneman, G., Firrincieli, A., Demeulemeester, J., Vantomme, A., Clarysse, T., Nakatsuka, O., Zaima, S., Dekoster, J., Caymax, M., Loo, R.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2011; Elsevier
• Subjects: Activation; Applied sciences; B implantation in GeSn; Channels; Construction; Drains; Electronics; Exact sciences and technology; Germanium; GeSn materials; GeSn thermal budget; NiGeSn formation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Silicon germanides; Source/drain engineering; Strained Ge pMOSFETs; Tin; Transistors; Strained Ge pMOSFETs; GeSn materials; GeSn thermal budget; Source/drain engineering; B implantation in GeSn; NiGeSn formation; Performance evaluation; Semiconductor alloys; MOSFET; Ge-Si alloys; PMOS technology; Lattice parameters; Switching; Compressive stress; Uniaxial stress; Uniaxial strain; Germanium; Silicon; Binary alloy
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2010.10.025

In order to outperform current uniaxial compressively strained Silicon channel pMOSFET technology (with embedded SiGe source/drain), switching to strained Ge channel is mandatory. GeSn materials, having larger lattice parameter than Ge, are proposed in this article as embedded source/drain stressors for Ge channels. Our simulation results indicate that a minimum of 5% Sn is required in the GeSn source/drain to build a competitive strained Ge pMOSFETs with respect to strained Si channels. Therefore the compatibility of GeSn (with 2–8% Sn) materials with source/drain engineering processes (B implantation and activation and NiGeSn formation) has been studied. A low thermal budget has been determined for those processes on GeSn alloys: temperatures must be lower than 600 °C for B activation and lower than 450 °C for NiGeSn formation.