InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelength

We demonstrate the growth of crack‐free blue and green‐emitting LED structures grown on 2‐inch and 6‐inch Si(111) substrates by metalorganic vapour phase epitaxy (MOVPE), using AlN nucleation layers and AlGaN buffer layers for stress management. LED device performance and its dependence on threading...

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Bibliographic Details
Published inPhysica status solidi. C Vol. 7; no. 7-8; pp. 2168 - 2170
Main Authors Zhu, Dandan, McAleese, Clifford, Häberlen, Maik, Salcianu, Carmen, Thrush, Ted, Kappers, Menno, Phillips, Andrew, Lane, Penelope, Kane, Michael, Wallis, David, Martin, Trevor, Astles, Mike, Humphreys, Colin
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.07.2010
WILEY‐VCH Verlag
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Summary:We demonstrate the growth of crack‐free blue and green‐emitting LED structures grown on 2‐inch and 6‐inch Si(111) substrates by metalorganic vapour phase epitaxy (MOVPE), using AlN nucleation layers and AlGaN buffer layers for stress management. LED device performance and its dependence on threading dislocation (TD) density and emission wavelength were studied. Despite the inherently low light extraction efficiency, an output power of 1.2 mW at 50 mA was measured from a 500 μm square planar device, emitting at 455 nm. The light output decreases dramatically as the emission wavelength increases from 455 nm to 510 nm. For LED devices emitting at similar wavelength, the light output was more than doubled when the TD density was reduced from 5 × 109 cm‐2 to 2 × 109 cm‐2. Our results clearly show that high TD density is detrimental to the overall light output, highlighting the need for further TD reduction for structures grown on Si. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:istex:CB3A9AFC09CBEF55BFF31E7724C5DD7753CE3ABA
EPSRC - No. EP/EC3516711; No. EP/E035191/1
ArticleID:PSSC200983522
ark:/67375/WNG-F7ZZMXVL-W
UK Technology Strategy Board - No. TP/6/EPH/6/I/K2509F
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:1862-6351
1610-1642
1610-1642
DOI:10.1002/pssc.200983522