Time variation of GaN photoelectrochemical reactions affected by light intensity and applied bias

We investigated photoelectrochemical reactions affected by light intensity and applied bias using GaN. Time variations of the photocurrent changed with the photo‐illuminated intensity and the applied bias. The bias application affected the time variation much, and the bias under +0.2 V vs counterele...

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Bibliographic Details
Published inPhysica status solidi. C Vol. 7; no. 7-8; pp. 2221 - 2223
Main Authors Koike, Kayo, Sato, Keiichi, Fujii, Katsushi, Goto, Takenari, Yao, Takafumi
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.07.2010
WILEY‐VCH Verlag
Subjects
Bias
electrochemistry
electrodes
Gallium nitrides
GaN
MOVPE
Photocurrent
Photoelectric effect
Reproduction
Solid state physics
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Summary:We investigated photoelectrochemical reactions affected by light intensity and applied bias using GaN. Time variations of the photocurrent changed with the photo‐illuminated intensity and the applied bias. The bias application affected the time variation much, and the bias under +0.2 V vs counterelectrode for n‐type GaN is good for the continuous reaction. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:istex:07151FD726EC0A989D7A91AD641DF201C9807153
ark:/67375/WNG-SJ63NRXN-J
ArticleID:PSSC200983450
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1862-6351
1610-1642
1610-1642
DOI:10.1002/pssc.200983450