Preparation of transparent CuCrO2:Mg/ZnO p–n junctions by pulsed laser deposition

• Published in: Thin solid films Vol. 515; no. 4; pp. 2415 - 2418
• Main Authors: Tonooka, Kazuhiko, Kikuchi, Naoto
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 05.12.2006; Elsevier Science
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Laser deposition; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Mg-doped CuCrO2; Oxide semiconductor; Physics; Transparent conducting oxide p–n junction; ZnO; Oxide semiconductor; ZnO; Transparent conducting oxide p–n junction; Mg-doped CuCrO2; Magnesium additions; Rectification; Glass; Pulsed laser deposition; p n heterojunctions; Thin films; Tin oxides; Zinc oxides; p type semiconductor; Chromium oxides; p n junctions; Laser ablation technique; Indium oxides; IV characteristic; Copper oxides; Transparent material; Transparent conducting oxide p-n junction
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2006.05.023

Transparent p–n heterojunctions composed of zinc oxide, copper–chromium oxide, and indium tin oxide (ITO) films were fabricated by pulsed laser deposition (PLD) on glass substrates at temperatures as low as 500 °C. The rectifying characteristics were observed in the current–voltage curves of the prepared junctions. Undoped and Mg-doped CuCrO2 films were examined for their suitability as the p-type semiconductor layer for these junctions. A p–n junction with an n+-ZnO/n-ZnO/p-CuCrO2:Mg/ITO/glass structure exhibited the highest conductivity among all the samples. This 0.4-μm-thick junction exhibited an optical transparency of greater than 80% in the visible range.