Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate

• Published in: Microelectronic engineering Vol. 80; pp. 30 - 33
• Main Authors: Cheng, Chao-Ching, Chien, Chao-Hsin, Chen, Ching-Wei, Hsu, Shih-Lu, Yang, Ming-Yi, Huang, Chien-Chao, Yang, Fu-Liang, Chang, Chun-Yen
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.06.2005; Elsevier Science
• Subjects: Applied sciences; Dielectric, amorphous and glass solid devices; Electronics; Exact sciences and technology; Germanium; HfOxNy; high-k gate dielectric; post-deposition-annealing; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Germanium; high-k gate dielectric; HfOxNy; post-deposition-annealing; Interfacial layer; Annealing; MOS capacitor; Dielectric substrate; Gate oxide; Hafnium Nitrides oxides; Leakage current; High k dielectric; Electrical characteristic
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2005.04.033

We systematically investigated the effect of post-deposition-annealing (PDA) on the electrical characteristics of Ge MOS capacitors with hafnium-oxynitride gate dielectric. The higher PDA temperature and longer PDA time was found to obtain the lower equivalent oxide thickness (EOT) of HfOxNy/Ge gate stack, however, with a larger hysteresis width. A lower EOT of 19.5 Å with a low leakage current of 1.8×10−5A/cm2 at VG=−1V was achieved after 600 °C annealing for 5 min. The improved capacitor properties after the PDA may be closely related to the different compositions and thicknesses of the resultant interfacial layers.