Direct fabrication of nano-gap electrodes by focused ion beam etching

A simple approach to increase the reliability of nano-gap electrode fabrication techniques is presented. The method is based on maskless sputter etching of Au electrodes using a focused ion beam (FIB) and in-situ monitoring of the etching steps by measuring a current fed to the Au electrodes. The in...

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Bibliographic Details
Published inThin solid films Vol. 499; no. 1; pp. 279 - 284
Main Authors Nagase, Takashi, Gamo, Kenji, Kubota, Tohru, Mashiko, Shinro
Format Journal Article Conference Proceeding
LanguageEnglish
Published Lausanne Elsevier B.V 21.03.2006
Elsevier Science
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Summary:A simple approach to increase the reliability of nano-gap electrode fabrication techniques is presented. The method is based on maskless sputter etching of Au electrodes using a focused ion beam (FIB) and in-situ monitoring of the etching steps by measuring a current fed to the Au electrodes. The in-situ monitoring is crucial to form nano-gaps much narrower than a FIB spot size. By using this approach, gaps of ∼3–6 nm are fabricated with the high yield of ∼90%, and most of the fabricated nano-gap electrodes showed high resistances of 10 GΩ–1 TΩ. The controllability of the fabrication steps is significantly improved by using triple-layered films consisting of top Ti, Au, and bottom adhesion Ti layers. The applicability of the fabricated nano-gap electrodes to electron transport studies of nano-sized objects is demonstrated by electrical measurement of Au colloidal nano-particles.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2005.07.031