Temperature：a critical parameter affecting the optical properties of porous silicon

• Published in: Journal of semiconductors Vol. 30; no. 6; pp. 29 - 33
• Main Author: 龙永福 葛进 丁洲民 侯晓远
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.06.2009
• Subjects: 光学特性; 光致发光光谱; 关键参数; 反射光谱; 多孔硅; 扫描电子显微镜; 样品制备; 温度范围
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/30/6/063002

The optical properties of porous silicon（PS） samples fabricated by pulse etching in a temperature range from-40 to 50-C have been investigated using reflectance spectroscopy,photoluminescence spectroscopy,and scanning electron microscopy（SEM）.The dependence of the optical parameters,such as the refractive index n and the optical thickness（nd） of PS samples,on the etching temperature has been analyzed in detail.As the etching temperature decreases,n decreases,indicating a higher porosity,and the physical thickness of PS samples also decreases.Meanwhile,the reflectance spectra exhibit a more intense interference band and the interfaces are smoother.In addition,the intensity of the PL emission spectra is dramatically increased.