Influence of the beam scan direction during focused electron beam induced deposition of 3D nanostructures

• Published in: Microelectronic engineering Vol. 78; pp. 307 - 313
• Main Authors: Bret, Tristan, Utke, Ivo, Hoffmann, Patrik
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.03.2005; Elsevier Science
• Subjects: Applied sciences; Copper CVD; Electron scattering; Electronics; Exact sciences and technology; Focused electron beam induced deposition; Micro- and nanostructures; Microelectronic fabrication (materials and surfaces technology); Molecular gas flow; Rapid prototyping; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Micro- and nanostructures; Rapid prototyping; Electron scattering; Copper CVD; Focused electron beam induced deposition; Molecular gas flow; Microelectronic fabrication; Growth rate; Gas flow; Nanostructure; Electron beam deposition; Chemical vapor deposition
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2005.01.007

We present evidence that during focused electron beam induced deposition of 3D micro- and nanostructures, different growth rates are obtained when scanning the beam towards different directions, as well as on different sides of a growing structure. The effects of electron scattering are taken into account and shown to account only partially for this observation. We propose an interpretation in terms of gas dynamics around the deposits. Our observation and description of this effect could serve the future design of complex shapes.