Optimization and experimentation of nanoimprint lithography based on FIB fabricated stamp

• Published in: Microelectronic engineering Vol. 82; no. 2; pp. 175 - 179
• Main Authors: Sun, Hong-Wen, Liu, Jing-Quan, Chen, Di, Gu, Pan
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.2005; Elsevier Science
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Focused ion beam; Microelectronic fabrication (materials and surfaces technology); Nanoimprint lithography; Orthogonal experiment; Parameter optimization; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Taguchi method; Orthogonal experiment; Nanoimprint lithography; Parameter optimization; Focused ion beam; Taguchi method; Microelectronic fabrication; Electron beam; Polymer; Maskless lithography; Nanolithography; Focused ion beam technology; Optimization
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2005.07.008

The maskless and resistless focused ion beam (FIB) fabrication approach to make imprint stamp is straightforward and rapid compared to the traditional electron beam method. FIB etched stamp consisting of grooves was employed to nanoimprint polymer mr-I 9020. Taguchi orthogonal experiment with four parameter elements, one at three levels was used to optimize the experiment parameters by the analysis of means and variances. The most significant factor influencing the height of replicated lines is imprint temperature and the optimal combination of the process parameters are the imprint temperature at 160 °C, imprint force at 1200 N, loading force velocity at 0.2 mm/min, and imprint time at 300 s.