Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes

• Published in: Journal of semiconductors Vol. 31; no. 9; pp. 49 - 52
• Main Author: 姬小利 杨富华 王军喜 段瑞飞 丁凯 曾一平 王国宏 李晋闽
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.09.2010
• Subjects: InGaN; 不对称; 光分布; 发光二极管; 多重量子井; 氮化铟镓; 空穴传输; 量子阱结构
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/31/9/094009

Asymmetric InGaN/GaN multiple-quantum well（MQW） light-emitting diodes were fabricated to expose the luminescence distribution and explore the hole transport.Under electrical injection,the sample with a wNQW active region in which the first QW nearest the p-side（QW1） is wider than the subsequent QWs shows a single long-wavelength light-emission peak arising from QW1.The inverse nWQW sample with a narrow QW1 shows one short-wavelength peak and one long-wavelength peak emitted separately from QW1 and the subsequent QWs.Increasing the barrier thickness between QW1 and the second QW（QWB1） in the nWQW structure,the long-wavelength peak is suppressed and the total light-emission intensity decreases.It was concluded that the nWQW and thin-QWB1 structure can improve the hole transport,and hence enhance the light-emission from the subsequent QWs and increase the internal quantum efficiency.