Growth characteristics evaluations on the 3D nanostructure fabrication by the high accuracy control of focused-ion-beam

• Published in: Microelectronic engineering Vol. 86; no. 4; pp. 552 - 555
• Main Authors: Kometani, Reo, Hoshino, Takayuki, Warisawa, Shin’ichi, Ishihara, Sunao
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2009; Elsevier
• Subjects: Adsorbed gas; Applied sciences; Downward growth; Electronics; Exact sciences and technology; Focused-ion-beam (FIB); Focused-ion-beam chemical vapor deposition (FIB-CVD); Growth characteristics; Microelectronic fabrication (materials and surfaces technology); Proximity effect; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Three-dimensional (3D) nanostructures; Three-dimensional (3D) nanostructures; Focused-ion-beam chemical vapor deposition (FIB-CVD); Growth characteristics; Adsorbed gas; Proximity effect; Focused-ion-beam (FIB); Downward growth; High resolution; Focused-ion-beam chemical vapor; Nanostructure; Lateral growth; Chemical vapor deposition; Focused ion beam technology; Microelectronic fabrication; Three dimensional model; deposition (FIB-CVD); Vertical alignment
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2009.01.037

Several evaluations of the growth characteristics of three-dimensional (3D) nanostructures, such as the dependence of the amount of adsorbed gas on vertical growth, dependence of focused-ion-beam (FIB) irradiation pitch on lateral growth, and the relationship between the number of irradiation pitches and vertical growth, fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD) were carried out by controlling the Ga + FIB at a positional accuracy of less than 1 nm. The result of this study indicated that high resolution control of the vertically aligned nanostructure could be achieved by carrying out high speed scanning of FIB. And, we found that the growth reaction in FIB-CVD depended on the FIB irradiation pitch change of 0.1 nm. In addition, downward growth was achieved by FIB-CVD, in spite of its limitation in the maximum allowable growth angle (approximately −17°). Furthermore, a proximity effect was observed during the fabrication of 3D nanostructures by FIB-CVD.