Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface
A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La(1-x)Sr(x)MnO3 electrode. Using first-principles density-functional theory we demonstrate that a...
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| Published in | Physical review letters Vol. 106; no. 15; p. 157203 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
United States
13.04.2011
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| Online Access | Get more information |
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| Summary: | A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La(1-x)Sr(x)MnO3 electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of La(1-x)Sr(x)MnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic-scale spin valve by filtering spin-dependent current. This produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect. |
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| ISSN: | 1079-7114 |
| DOI: | 10.1103/physrevlett.106.157203 |