Vanadium doped tin dioxide as a novel sulfur dioxide sensor

Considering the short-term exposure limit of SO 2 to be 5 ppm, we first time report that semiconductor sensors based on vanadium doped SnO 2 can be used for SO 2 leak detection because of their good sensitivity towards SO 2 at concentrations down to 5 ppm. Such sensors are quite selective in presenc...

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Published inTalanta (Oxford) Vol. 75; no. 2; pp. 385 - 389
Main Authors Das, S., Chakraborty, S., Parkash, O., Kumar, D., Bandyopadhyay, S., Samudrala, S.K., Sen, A., Maiti, H.S.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 15.04.2008
Oxford Elsevier
Subjects
Analytical chemistry
Chemistry
Exact sciences and technology
Gas sensor
General, instrumentation
Sulfur dioxide
Tin dioxide
Tin dioxide
Gas sensor
Sulfur dioxide
Trace analysis
Methane
Oxygen
Vanadium
Chemical sensor
Leak detection
Butane
Sensitivity
Tin
Oxidation
Sulfur trioxide
Carbon monoxide
Sulfur
Gas detector
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Summary:Considering the short-term exposure limit of SO 2 to be 5 ppm, we first time report that semiconductor sensors based on vanadium doped SnO 2 can be used for SO 2 leak detection because of their good sensitivity towards SO 2 at concentrations down to 5 ppm. Such sensors are quite selective in presence of other gases like carbon monoxide, methane and butane. The high sensitivity of vanadium doped tin dioxide towards SO 2 may be understood by considering the oxidation of sulfur dioxide to sulfur trioxide on SnO 2 surface through redox cycles of vanadium–sulfur–oxygen adsorbed species.
Bibliography:ObjectType-Article-1
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ISSN:0039-9140
1873-3573
DOI:10.1016/j.talanta.2007.11.010