Toward a Germanium Laser for Integrated Silicon Photonics

It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter and a gain medium at its direct bandgap within the third optical communication window ( ~1520-1620 nm). In this paper, we systematically discu...

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Bibliographic Details
Published inIEEE journal of selected topics in quantum electronics Vol. 16; no. 1; pp. 124 - 131
Main Authors Xiaochen Sun, Jifeng Liu, Kimerling, L.C., Michel, J.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2010
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Band theory
Capacitive sensors
Doping
Gain
Germanium
Guidelines
Heterojunctions
Integrated optoelectronics
Laser theory
light emitters
Light emitting diodes
Optical fiber communication
Photonic band gap
Silicon
silicon photonics
Strain
Temperature
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Summary:It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter and a gain medium at its direct bandgap within the third optical communication window ( ~1520-1620 nm). In this paper, we systematically discuss the effect of strain, doping, and temperature on the direct-gap optical gain in germanium. For electrically pumped devices, properties and design guidelines of Ge/Si heterojunction are also analyzed and compared with the results from fabricated Ge/Si heterojunction LEDs.
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ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2009.2027445