Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices
Recently, films created by incorporating metallic nanoparticles into organic or polymeric materials have demonstrated electrical bistability, as well as the memory effect, when subjected to an electrical bias. Organic and polymeric digital memory devices based on this bistable electronic behavior ha...
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Published in | Advanced functional materials Vol. 16; no. 8; pp. 1001 - 1014 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Weinheim
WILEY-VCH Verlag
19.05.2006
WILEY‐VCH Verlag |
Subjects | |
Online Access | Get full text |
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Summary: | Recently, films created by incorporating metallic nanoparticles into organic or polymeric materials have demonstrated electrical bistability, as well as the memory effect, when subjected to an electrical bias. Organic and polymeric digital memory devices based on this bistable electronic behavior have emerged as a viable technology in the field of organic electronics. These devices exhibit fast response speeds and can form multiple‐layer stacking structures, demonstrating that organic memory devices possess a high potential to become flexible, ultrafast, and ultrahigh‐density memory devices. This behavior is believed to be related to charge storage in the organic or polymer film, where devices are able to exhibit two different states of conductivity often separated by several orders of magnitude. By defining the two states as “1” and “0”, it is now possible to create digital memory devices with this technology. This article reviews electrically bistable devices developed in our laboratory. Our research has stimulated strong interest in this area worldwide. The research by other laboratories is reviewed as well.
Research on electrically bistable devices using organic or polymer thin films is reviewed. These bistable devices have high potential for application in nonvolatile digital memory. The figure shows an organic/polymeric memory device that has been developed at the University of California, Los Angeles. The devices can be switched on a nanosecond time scale, and the data can be stored for a long period of time. |
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Bibliography: | The authors thank Prof. Richard Kaner of the Chemistry Department of UCLA for his collaboration and providing the PANI nanofiber. Technical discussions with Dr. Chuck Szmanda of Rohm Haas, Prof. Qibing Pei of UCLA, and Dr. Ed Chandras of Bell Labs are also acknowledged. We are indebted to Mr. Brian Shedd for his help in polishing our English. Finally, we express ultimate thanks to our financial supporters over the past several years on the organic/polymeric memory devices. The Office of Naval Research and National Science Foundation provided the initial funds for the triple-layer organic memory devices. The Air Force of Scientific Research provided the funding for the polymer memory devices. Finally, the PANI/Au NP memory device was supported by the UCLA FENA-MACRO Center with funds from the Semiconductor Research Corporation (SRC) and the Defense Advanced Research Project Agency (DARPA). istex:1B2AF2FE5F6065E465B83744772B879B3A094F76 ark:/67375/WNG-2ZTD54FS-3 ArticleID:ADFM200500429 The authors thank Prof. Richard Kaner of the Chemistry Department of UCLA for his collaboration and providing the PANI nanofiber. Technical discussions with Dr. Chuck Szmanda of Rohm Haas, Prof. Qibing Pei of UCLA, and Dr. Ed Chandras of Bell Labs are also acknowledged. We are indebted to Mr. Brian Shedd for his help in polishing our English. Finally, we express ultimate thanks to our financial supporters over the past several years on the organic/polymeric memory devices. The Office of Naval Research and National Science Foundation provided the initial funds for the triple‐layer organic memory devices. The Air Force of Scientific Research provided the funding for the polymer memory devices. Finally, the PANI/Au NP memory device was supported by the UCLA FENA‐MACRO Center with funds from the Semiconductor Research Corporation (SRC) and the Defense Advanced Research Project Agency (DARPA). ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1616-301X 1616-3028 |
DOI: | 10.1002/adfm.200500429 |