Plasticity and deformation microstructure of 4H-SiC below the brittle-to-ductile transition

• Published in: Physica status solidi. C Vol. 4; no. 8; pp. 2929 - 2933
• Main Authors: Mussi, A., Rabier, J., Thilly, L., Demenet, J. L.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.07.2007; WILEY‐VCH Verlag
• Subjects: 61.50.Ks; 61.72.Ff; 61.72.Nn; 62.20.Fe; 68.37.Lp; 81.70.Bt
• ISSN: 1862-6351; 1610-1634; 1610-1642
• DOI: 10.1002/pssc.200675438

Compression tests under confining pressure are performed with a Paterson press in order to deform 4H‐SiC plastically below the brittle‐to‐ductile transition temperature. Deformation microstructure in this regime is analysed using conventional and high resolution transmission electron microscopy and is compared with literature. Leading partial dislocations with carbon core and silicon core are observed on basal plane as well as perfect dislocations out of the basal plane. Double stacking faults are evidenced in the deformed microstructure. These original observations indicate that the deformation microstructures of 4H‐SiC in the brittle domain are more complex than previously reported. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)