Tunable n-Type Conductivity and Transport Properties of Ga-doped ZnO Nanowire Arrays

Well‐aligned ZnO nanowires (NWs) with tunable n‐type conductivity are synthesized by introducing Ga2O3 as a dopant source in thermal evaporation. The crystallographic orientation of the NWs depends on the dopant content. Electrical transport property measurements on single nanowires verify that the...

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Bibliographic Details
Published inAdvanced materials (Weinheim) Vol. 20; no. 1; pp. 168 - 173
Main Authors Yuan, G.-D., Zhang, W.-J., Jie, J.-S., Fan, X., Tang, J.-X., Shafiq, I., Ye, Z.-Z., Lee, C.-S., Lee, S.-T.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 07.01.2008
WILEY‐VCH Verlag
Subjects
Conductivity
Doping
Inorganic nanostructures
Semiconductors
Zinc oxide
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Summary:Well‐aligned ZnO nanowires (NWs) with tunable n‐type conductivity are synthesized by introducing Ga2O3 as a dopant source in thermal evaporation. The crystallographic orientation of the NWs depends on the dopant content. Electrical transport property measurements on single nanowires verify that the resistivity of ZnO NWs can be controlled, with high reproducibility, by the Ga impurities.
Bibliography:The work was supported by the Research Grants Council of Hong Kong SAR, China (Project Nos. N_CityU125/05 and CityU 115905), the strategic Research Grant of the City University of Hong Kong (Project No. 7001937), and the National Research Program of China (Grant No. 2006CB933000).
istex:681E190A93002C239FF5C03F471445AB7FF46875
ark:/67375/WNG-K897HNGF-5
Research Grant of the City University of Hong Kong - No. 7001937
ArticleID:ADMA200701377
National Research Program of China - No. 2006CB933000
Research Grants Council of Hong Kong SAR, China - No. N_CityU125/05; No. CityU 115905
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200701377