Dense Self-Assembly on Sparse Chemical Patterns: Rectifying and Multiplying Lithographic Patterns Using Block Copolymers

A lithography‐friendly self‐assembly process which multiplies and rectifies an existing resist patterns is demonstrated here. A polymer film (right figure) has assembled at a 14 nm half‐pitch on a thin resist pattern at twice the period (left figure). This directed self‐assembly process dramatically...

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Published inAdvanced materials (Weinheim) Vol. 20; no. 16; pp. 3155 - 3158
Main Authors Cheng, Joy Y., Rettner, Charles T., Sanders, Daniel P., Kim, Ho-Cheol, Hinsberg, William D.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 18.08.2008
WILEY‐VCH Verlag
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Summary:A lithography‐friendly self‐assembly process which multiplies and rectifies an existing resist patterns is demonstrated here. A polymer film (right figure) has assembled at a 14 nm half‐pitch on a thin resist pattern at twice the period (left figure). This directed self‐assembly process dramatically heals defects and reduces feature size variation of the ill‐defined resist patterns.
Bibliography:ark:/67375/WNG-7K017X7F-7
The authors thank Mark Hart and Alexander M. Friz for their advice and work on reactive ion etching.
istex:76E0F0B32C99AA9F3AD99D6ABA6F02C004F2C426
ArticleID:ADMA200800826
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200800826