Carbon nanotube via interconnect technologies: size-classified catalyst nanoparticles and low-resistance ohmic contact formation

• Published in: Physica status solidi. A, Applications and materials science Vol. 203; no. 14; pp. 3611 - 3616
• Main Authors: Awano, Y., Sato, S., Kondo, D., Ohfuti, M., Kawabata, A., Nihei, M., Yokoyama, N.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.11.2006; WILEY‐VCH Verlag
• Subjects: 31.15.Ar; 61.46.Fg; 73.22.−f; 73.63.Fg; 81.07.De; 85.35.Kt
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.200622415

We propose a new approach to fabricating carbon nanotube (CNT) via interconnects for future LSIs, which uses preformed catalyst nanoparticles to grow the CNTs. A newly designed impactor provided size‐classified catalyst particles. For the new approach, we employ a TiN contact layer which is more resistant to oxidation and enables us to form a lower resistance ohmic contact between CNTs and wiring layers. The resultant CNT–via resistance was 0.59 Ω for 2‐µm vias, which is the smallest ever reported. We also study the CNT nucleation process using molecular dynamics and discuss how to remove amorphous carbon from the nucleation process. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)