Photocapacitance characteristics of (In,Ga)N/GaN MQW structures

Photocapacitance techniques have been used to study the electronic properties of (In,Ga)N/GaN quantum wells (QWs). Negative differential capacitance (NDC) features were observed at room temperature for the first time in capacitance‐voltage (C‐V) experiments under optical excitation. A detailed analy...

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Bibliographic Details
Published inPhysica status solidi. C Vol. 3; no. 6; pp. 1978 - 1982
Main Authors Rivera, C., Pau, J. L., Muñoz, E., Ive, T., Brandt, O.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.06.2006
WILEY‐VCH Verlag
Subjects
71.23.An
72.40.+w
78.67.De
81.05.Ea
81.07.St
85.60.Bt
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Summary:Photocapacitance techniques have been used to study the electronic properties of (In,Ga)N/GaN quantum wells (QWs). Negative differential capacitance (NDC) features were observed at room temperature for the first time in capacitance‐voltage (C‐V) experiments under optical excitation. A detailed analysis of the results seems to indicate that charge accumulation in quantum dot‐like structures embedded in the QWs could be responsible of such behaviour. Polarization field effects present in these structures are detected through C‐V hysteresis, allowing to estimate built‐in electric fields as high as 1.9 MV/cm in 14% In QWs. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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ISSN:1862-6351
1610-1634
1610-1642
DOI:10.1002/pssc.200565224