Size-Dependent Transport and Thermoelectric Properties of Individual Polycrystalline Bismuth Nanowires

Nanofabrication methods and a device architecture are combined to allow for four‐point electric, thermoelectric, and electric field‐effect measurements on individual Bi nanowires. The figure shows a false‐color SEM image of a typical device used in this study, with the 11 Bi nanowires shown as a red...

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Published inAdvanced materials (Weinheim) Vol. 18; no. 7; pp. 864 - 869
Main Authors Boukai, A., Xu, K., Heath, J. R.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 04.04.2006
WILEY‐VCH Verlag
Subjects
Charge transport
Field-effect transistors
metal
Nanowires
Nanowires, metal
Thermoelectric materials
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Summary:Nanofabrication methods and a device architecture are combined to allow for four‐point electric, thermoelectric, and electric field‐effect measurements on individual Bi nanowires. The figure shows a false‐color SEM image of a typical device used in this study, with the 11 Bi nanowires shown as a red → white gradient. The temperature dependence of the various transport properties as a function of nanowire width is investigated and discussed.
Bibliography:Akram Boukai and Ke Xu contributed equally to this work. This work was supported by the Department of Energy and by the MARCO Center for Advanced Materials and Devices. We would also like to acknowledge Dr. Ezekiel Johnston-Halperin and Dr. Yi Luo for fabrication assistance and advice.
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ArticleID:ADMA200502194
istex:92E513204E1F9AD6F48DBF66F7AFE10E0DAD8AF3
Akram Boukai and Ke Xu contributed equally to this work. This work was supported by the Department of Energy and by the MARCO Center for Advanced Materials and Devices. We would also like to acknowledge Dr. Ezekiel Johnston‐Halperin and Dr. Yi Luo for fabrication assistance and advice.
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200502194