Random Circuit Breaker Network Model for Unipolar Resistance Switching

The random circuit breaker network model is proposed for unipolar resistance switching behavior. This model describes reversible dynamic processes involving two quasi‐metastable states. The formation and rupture of conducting channels (see figure) in the polycrystalline TiO2 thin films may be analyz...

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Published inAdvanced materials (Weinheim) Vol. 20; no. 6; pp. 1154 - 1159
Main Authors Chae, Seung Chul, Lee, Jae Sung, Kim, Sejin, Lee, Shin Buhm, Chang, Seo Hyoung, Liu, Chunli, Kahng, Byungnam, Shin, Hyunjung, Kim, Dong-Wook, Jung, Chang Uk, Seo, Sunae, Lee, Myoung-Jae, Noh, Tae Won
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 18.03.2008
WILEY‐VCH Verlag
Subjects
atomic force microscopy
modeling
titanium oxides
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Summary:The random circuit breaker network model is proposed for unipolar resistance switching behavior. This model describes reversible dynamic processes involving two quasi‐metastable states. The formation and rupture of conducting channels (see figure) in the polycrystalline TiO2 thin films may be analyzed by the self organized avalanche process in the random circuit breaker network model.
Bibliography:S. C. C. and J. S. L. contributed equally to this work. This study was supported principally by a Creative Research Initiative (Functionally Integrated Oxide Heterostructures) from the Korean Ministry of Science and Technology (MOST) and the Korea Science and Engineering Foundation (KOSEF), and in part by Samsung Electronics. B. K. and J. S. L were supported by the KOSEF grant funded by the MOST (No.R17-2007-073-01001-0). H. S. and S. K. would like to thank the Center for Materials and Processes of Self-assembly (R11-2005-048-00000-0) and National Research Lab (R0A-2007-000-20105-0) Program in the MOST/KOSEF ERC program. Supporting Information is available from Wiley InterScience or from the author.
istex:6390B81F6515354D2487C21707DBDB0833E44E74
KOSEF grant funded by the MOST - No. R17-2007-073-01001-0
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ArticleID:ADMA200702024
S. C. C. and J. S. L. contributed equally to this work. This study was supported principally by a Creative Research Initiative (Functionally Integrated Oxide Heterostructures) from the Korean Ministry of Science and Technology (MOST) and the Korea Science and Engineering Foundation (KOSEF), and in part by Samsung Electronics. B. K. and J. S. L were supported by the KOSEF grant funded by the MOST (No.R17‐2007‐073‐01001‐0). H. S. and S. K. would like to thank the Center for Materials and Processes of Self‐assembly (R11‐2005‐048‐00000‐0) and National Research Lab (R0A‐2007‐000‐20105‐0) Program in the MOST/KOSEF ERC program. Supporting Information is available from Wiley InterScience or from the author.
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200702024