High Carrier Density and Metallic Conductivity in Poly(3-hexylthiophene) Achieved by Electrostatic Charge Injection
The use of electrostatic charge injection (i.e., the transverse field effect) to induce both very large two‐dimensional hole densities (∼ 1015 charges cm–2) and metallic conductivities in poly(3‐hexylthiophene) (P3HT) is reported. Films of P3HT are electrostatically gated by a solution‐deposited pol...
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Published in | Advanced functional materials Vol. 16; no. 8; pp. 1051 - 1056 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Weinheim
WILEY-VCH Verlag
19.05.2006
WILEY‐VCH Verlag |
Subjects | |
Online Access | Get full text |
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Summary: | The use of electrostatic charge injection (i.e., the transverse field effect) to induce both very large two‐dimensional hole densities (∼ 1015 charges cm–2) and metallic conductivities in poly(3‐hexylthiophene) (P3HT) is reported. Films of P3HT are electrostatically gated by a solution‐deposited polymer‐electrolyte gate dielectric in a field‐effect‐transistor configuration. Exceptionally high hole field‐effect mobilities (up to 0.7 cm2 V–1 s–1) are measured concurrently with large hole densities, resulting in an extremely large sheet conductance of 200 μS sq.–1. The large room‐temperature conductivity of 1000 S cm–1 together with the very low measured activation energies (0.7–4 meV) suggest that the metal–insulator transition in P3HT is achieved. A maximum in sheet conductance versus charge density is also observed, which may result from near‐filling of the valence band or from charge correlations that lower the carrier mobility. Importantly, the large hole densities in P3HT are achieved using capacitive coupling between the polymer‐electrolyte gate dielectric and P3HT (i.e., the field effect) and not via chemical or electrochemical doping. Electrostatic control of carrier density up to 1015 charges cm–2 (∼ 1022 charges cm–3) opens opportunities to explore systematically the importance of charge‐correlation effects on transport in conjugated polymers without the structural rearrangement associated with chemical or electrochemical doping.
Electrostatic charge injection by a high‐capacitance polymer electrolyte gate dielectric was used to realize ca. 1015 charges cm–2 in regioregular poly(3‐hexylthiophene). Metallic room‐temperature conductivities, small current activation energies, and conductance maxima were observed at very high charge densities (see figure). |
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Bibliography: | This work was supported primarily by the MRSEC Program of the National Science Foundation under Award Number DMR-0212302. The authors thank Dr. B. T. Holmes for providing DPTP. M. J. Panzer thanks the NSF for support provided through a Graduate Research Fellowship. istex:725361CAB56C3F5377DE9F8950973D17D1E78AE1 ark:/67375/WNG-J42NV0Z2-7 ArticleID:ADFM200600111 This work was supported primarily by the MRSEC Program of the National Science Foundation under Award Number DMR‐0212302. The authors thank Dr. B. T. Holmes for providing DPTP. M. J. Panzer thanks the NSF for support provided through a Graduate Research Fellowship. ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1616-301X 1616-3028 |
DOI: | 10.1002/adfm.200600111 |