韩汝琦, 杜. 刘. 夏. 杨. (2010). Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method. Chinese physics B, 19(5), 536-541. https://doi.org/10.1088/1674-1056/19/5/057304
Chicago Style (17th ed.) Citation韩汝琦, 杜刚 刘晓彦 夏志良 杨竞峰. "Effect of Interface Roughness on the Carrier Transport in Germanium MOSFETs Investigated by Monte Carlo Method." Chinese Physics B 19, no. 5 (2010): 536-541. https://doi.org/10.1088/1674-1056/19/5/057304.
MLA (9th ed.) Citation韩汝琦, 杜刚 刘晓彦 夏志良 杨竞峰. "Effect of Interface Roughness on the Carrier Transport in Germanium MOSFETs Investigated by Monte Carlo Method." Chinese Physics B, vol. 19, no. 5, 2010, pp. 536-541, https://doi.org/10.1088/1674-1056/19/5/057304.
Warning: These citations may not always be 100% accurate.