Large photocurrent density enhancement assisted by non-absorbing spherical dielectric nanoparticles in a GaAs layer

Herein, we report a theoretical investigation of large photocurrent density enhancement in a GaAs absorber layer due to non-absorbing spherical dielectric (SiO 2 ) nanoparticles-based antireflection coating. The nanoparticles are embedded in a dielectric matrix (SiN) which improves the antireflectio...

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Bibliographic Details
Published inScientific reports Vol. 10; no. 1; p. 17107
Main Authors Singh, Bhaskar, Shabat, Mohammed M., Schaadt, Daniel M.
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 13.10.2020
Subjects
639/4077/909/4101/4096
639/624/399/354
639/624/400/1021
Humanities and Social Sciences
multidisciplinary
Science
Science (multidisciplinary)
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Summary:Herein, we report a theoretical investigation of large photocurrent density enhancement in a GaAs absorber layer due to non-absorbing spherical dielectric (SiO 2 ) nanoparticles-based antireflection coating. The nanoparticles are embedded in a dielectric matrix (SiN) which improves the antireflection property of SiN ( λ / 4 coating) and let to pass more photons into the GaAs layer. The improvement is noticed omnidirectional and the highest is more than 100% at 85° angle of incidence with the nanoparticles’ surface filling density of 70%. Sunrise to sunset calculation of normalized photocurrent density over the course of a year have also shown improvements in the nanoparticles’ case.
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ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-020-74186-7