Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found tha...
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| Published in | Chinese physics B Vol. 19; no. 5; pp. 567 - 570 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
IOP Publishing
01.05.2010
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/19/5/057802 |
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| Abstract | The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ca vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. |
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| AbstractList | The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ca vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. |
| Author | 赵德刚 张爽 刘文宝 郝小鹏 江德生 朱建军 刘宗顺 王辉 张书明 杨辉 魏龙 |
| AuthorAffiliation | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China National Institute of Metrology, Beijing 100013, China Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China |
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| Cites_doi | 10.1063/1.124337 10.1063/1.1762980 10.1063/1.1644029 10.1063/1.1356450 10.1063/1.116495 10.1063/1.1314877 10.1063/1.122057 10.1103/PhysRevLett.79.3030 10.1063/1.1868059 10.1063/1.1846936 10.1063/1.2213932 10.1063/1.1542946 10.1088/1674-1056/18/5/058 10.1109/JRPROC.1957.278528 10.1063/1.117767 |
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| References | 11 14 15 16 17 18 Peng C X (13) 2009; 18 1 2 3 Miller E J (7) 2002; 91 4 5 6 8 Sze S M (9) 1981 Hauto Járvi P (12) 1995 10 |
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| SubjectTerms | Barriers Density Gallium Gallium nitrides Leakage current Photodetectors Ultraviolet Vacancies 位错密度 光电探测器 势垒高度 氮化镓 漏电流 硅掺杂 紫外探测器 肖特基势垒 |
| Title | Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors |
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