周生强, 法. 李. 姚. 吴. (2011). Unidirectional expansion of lattice parameters in GaN induced by ion implantation. Chinese physics B, 20(5), 319-322. https://doi.org/10.1088/1674-1056/20/5/056101
Chicago Style (17th ed.) Citation周生强, 法涛 李琳 姚淑德 吴名枋. "Unidirectional Expansion of Lattice Parameters in GaN Induced by Ion Implantation." Chinese Physics B 20, no. 5 (2011): 319-322. https://doi.org/10.1088/1674-1056/20/5/056101.
MLA (9th ed.) Citation周生强, 法涛 李琳 姚淑德 吴名枋. "Unidirectional Expansion of Lattice Parameters in GaN Induced by Ion Implantation." Chinese Physics B, vol. 20, no. 5, 2011, pp. 319-322, https://doi.org/10.1088/1674-1056/20/5/056101.
Warning: These citations may not always be 100% accurate.