Unidirectional expansion of lattice parameters in GaN induced by ion implantation

This paper reports that the 150-keV Mn ions are implanted into CaN thin film grown on A1203 by metalorganic chemical vapour deposition. The X-ray diffraction reciprocal spacing mapping is applied to study the lattice parameter variation upon implantation and post-annealing. After implantation, a sig...

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Published inChinese physics B Vol. 20; no. 5; pp. 319 - 322
Main Author 法涛 李琳 姚淑德 吴名枋 周生强
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.05.2011
Subjects
GaN
化学气相沉积
单向
晶格参数
离子植入
离子注入
诱导
退火温度
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/20/5/056101

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Summary:This paper reports that the 150-keV Mn ions are implanted into CaN thin film grown on A1203 by metalorganic chemical vapour deposition. The X-ray diffraction reciprocal spacing mapping is applied to study the lattice parameter variation upon implantation and post-annealing. After implantation, a significant expansion is observed in the perpendicular direction. The lattice strain in perpendicular direction strongly depends on ion fluence and implantation geometry and can be partially relaxed by post-annealing. While in the parallel direction, the lattice parameter approximately keeps the same as the unimplanted GaN, which is independent of ion fluence, implantation geometry and post-annealing temperature.
Bibliography:This paper reports that the 150-keV Mn ions are implanted into CaN thin film grown on A1203 by metalorganic chemical vapour deposition. The X-ray diffraction reciprocal spacing mapping is applied to study the lattice parameter variation upon implantation and post-annealing. After implantation, a significant expansion is observed in the perpendicular direction. The lattice strain in perpendicular direction strongly depends on ion fluence and implantation geometry and can be partially relaxed by post-annealing. While in the parallel direction, the lattice parameter approximately keeps the same as the unimplanted GaN, which is independent of ion fluence, implantation geometry and post-annealing temperature.
Fa Tao,Li Lin,Yao Shu-De,Wu Ming-Fang,Zhou Sheng-Qiang State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijlng 100871, China
11-5639/O4
GaN, ion implantation, unidirectional strain, X-ray reciprocal space mapping
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/5/056101