Temperature dependence of neutron-induced soft errors in SRAMs

• Published in: Microelectronics and reliability Vol. 52; no. 1; pp. 289 - 293
• Main Authors: Bagatin, M., Gerardin, S., Paccagnella, A., Andreani, C., Gorini, G., Frost, C.D.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 2012; Elsevier
• Subjects: Applied sciences; Design. Technologies. Operation analysis. Testing; Devices; Diffusion; Electronics; Exact sciences and technology; Integrated circuits; Integrated circuits by function (including memories and processors); Microelectronics; Renovating; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Simulation; Soft errors; Temperature dependence; Transient current; Induced current; Temperature dependence; Static random access memory; Soft error; Non volatile memory; Feedback; Random access memory; Integrated circuit; Temperature effect; Feedback regulation; SPICE
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2011.08.011

► We irradiate commercial SRAMs with wide-spectrum neutrons at different temperatures. ► Depending on the vendor the soft error rate increases or decreases with temperature. ► We study the temperature dependence of the cell feedback time and restoring current. ► The particle-induced transient currents are studied versus temperature. We irradiated commercial SRAMs with wide-spectrum neutrons at different temperatures. We observed that, depending on the vendor, the soft error rate either increases or slightly decreases with temperature, even in devices belonging to the same technology node. SPICE simulations were used to investigate the temperature dependence of the cell feedback time and restoring current. The shape and magnitude of the particle-induced transient current is discussed as a function of temperature. The variability in the response is attributed to the balance of contrasting factors, such as cell speed reduction and increased diffusion with increasing temperature.