Electrical properties of low temperature deposited amorphous barium titanate thin films as dielectrics for integrated capacitors

• Published in: Thin solid films Vol. 504; no. 1; pp. 201 - 204
• Main Authors: El Kamel, F., Gonon, P., Jomni, F.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 10.05.2006; Elsevier Science; Elsevier
• Subjects: Amorphous barium titanate; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Dielectric loss and relaxation; Dielectric properties; Dielectric properties of solids and liquids; Dielectric thin films; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electric power; Electrical characterization; Engineering Sciences; Exact sciences and technology; Niobates, titanates, tantalates, pzt ceramics, etc; Permittivity (dielectric function); Physics; Electrical characterization; Amorphous barium titanate; Dielectric properties; Temperature dependence; Inorganic compounds; Electrical properties; Capacitors; Transition element compounds; Barium titanates; Crystal growth from vapors; Dispersions; Leakage currents; Experimental study; Growth from vapor; Magnetrons; Cathode sputtering; Ferroelectric materials; Dielectric losses; Preparation; Dielectric thin films; Permittivity; Radiofrequency sputtering; Low temperature
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.09.125

Amorphous barium titanate (a-BaTiO 3) thin films were deposited by the RF magnetron sputtering technique. The films were grown directly on copper substrates which were maintained at low temperature during deposition (water-cooled substrates). We studied the permittivity (dielectric constant and loss) in the 0.1 Hz–100 kHz range, from − 100 to 225 °C. Leakage currents (DC conductivity) were also studied as a function of the applied field and temperature. At room temperature the dielectric constant is 18.5 (100 kHz), the dissipation factor is 4 × 10 − 3 and the conductivity is 6 × 10 − 16 S/cm (2.7 μm thick films). A dielectric dispersion is observed at low frequencies that becomes pronounced when the temperature is increased.