Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

• Published in: Advanced materials interfaces Vol. 10; no. 13
• Main Authors: Wang, Wantang, Lu, Xuesong, Wu, Xinke, Zhang, Yiqiang, Wang, Rong, Yang, Deren, Pi, Xiaodong
• Format: Journal Article
• Language: English
• Published: Weinheim John Wiley & Sons, Inc 01.05.2023; Wiley-VCH
• Subjects: 4H silicon carbide; Chemical-mechanical polishing; Efficiency; Electric vehicles; Manufacturing; material removal rate; Material removal rate (machining); Performance enhancement; Silicon carbide; Surface properties; Surface roughness; Wafers

4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones. Chemical–mechanical polishing (CMP) is the key processing technology in the planarization of 4H‐SiC wafers. En...