Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

• Published in: Advanced materials interfaces Vol. 10; no. 13
• Main Authors: Wang, Wantang, Lu, Xuesong, Wu, Xinke, Zhang, Yiqiang, Wang, Rong, Yang, Deren, Pi, Xiaodong
• Format: Journal Article
• Language: English
• Published: Weinheim John Wiley & Sons, Inc 01.05.2023; Wiley-VCH
• Subjects: 4H silicon carbide; Chemical-mechanical polishing; Efficiency; Electric vehicles; Manufacturing; material removal rate; Material removal rate (machining); Performance enhancement; Silicon carbide; Surface properties; Surface roughness; Wafers
• ISSN: 2196-7350; 2196-7350
• DOI: 10.1002/admi.202202369

4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones. Chemical–mechanical polishing (CMP) is the key processing technology in the planarization of 4H‐SiC wafers. Enhancing the performance of CMP is critical to improving the surface quality and reducing the processing cost of 4H‐SiC wafers. In this review, the superior properties of 4H‐SiC and the processing of 4H‐SiC wafers are introduced. The development of CMP with chemical, mechanical, and chemical–mechanical synergistic approaches to improve the performance of CMP is systematically reviewed. The basic principle and processing system of each improvement approach are presented. By comparing the material removal rate of CMP and the surface roughness of CMP‐treated 4H‐SiC wafers, the prospect on the chemical, mechanical, and chemical–mechanical synergistic improvement approaches is finally provided. Recent progress on the CMP of 4H‐SiC wafers are discussed after a brief overview of the basic properties of 4H‐SiC. Chemical, mechanical, and chemical–mechanical synergistic approaches for the efficiency improvement of CMP are highlighted. By discussing the advantages and disadvantages of the efficiency‐improvement approaches, the challenges of using these approaches in industry are analyzed. Finally, prospects on the development of the CMP of 4H‐SiC wafers are presented.